IPN60R1K0PFD7S

Symbol Micros: TIPN60r1k0pfd7s

351563

TIPN60r1k0pfd7s

Contractor Symbol:

Case : SOT223

Datasheet

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CoolMOS MOSFET N-Channel Enhancement Mode 650V 4.7A IPN60R1K0PFDS7SATMA1

Parameters

Open channel resistance:	1,978Ohm
Max. drain current:	4,7A
Max. power loss:	6W
Case:	SOT223
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	650V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: IPN60R1K0PFD7SATMA1 Case style: SOT223  

External warehouse:

3000 pcs.

Quantity of pcs.	3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,2310

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Packaging:
3000

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Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	1,978Ohm
Max. drain current:	4,7A
Max. power loss:	6W
Case:	SOT223
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	650V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-40°C ~ 150°C
Mounting:	SMD

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