IPN60R360PFD7S
Symbol Micros:
TIPN60r360pfd7s
Case : SOT223
Transistors - FETs, MOSFETs - Single IPN60R360PFD7SATMA1
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Write sales // micros.com.pl or call: +48 785 054 437
Write sales // micros.com.pl or call: +48 785 054 437
Parameters
| Open channel resistance: | 705mOhm |
| Max. drain current: | 10A |
| Max. power loss: | 7W |
| Case: | SOT223 |
| Manufacturer: | Infineon Technologies |
| Max. drain-source voltage: | 650V |
| Transistor type: | N-MOSFET |
Manufacturer:: Infineon
Manufacturer part number: IPN60R360PFD7SATMA1 RoHS
Case style: SOT223t/r
Datasheet
In stock:
1 pcs.
| Quantity of pcs. | 1+ | 5+ | 20+ | 100+ | 500+ |
|---|---|---|---|---|---|
| Net price (EUR) | 0,9924 | 0,6585 | 0,5457 | 0,4927 | 0,4720 |
| Open channel resistance: | 705mOhm |
| Max. drain current: | 10A |
| Max. power loss: | 7W |
| Case: | SOT223 |
| Manufacturer: | Infineon Technologies |
| Max. drain-source voltage: | 650V |
| Transistor type: | N-MOSFET |
| Max. gate-source Voltage: | 20V |
| Operating temperature (range): | -40°C ~ 150°C |
| Mounting: | SMD |
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