IPP60R099C6

Symbol Micros: TIPP60r099c6
Contractor Symbol:
Case : TO220
N-MOSFET 37.9A 600V 278W IPP60R099C6XKSA1
Parameters
Open channel resistance: 230mOhm
Max. drain current: 37,9A
Max. power loss: 278W
Case: TO220
Manufacturer: Infineon Technologies
Max. drain-source voltage: 650V
Transistor type: N-MOSFET
Manufacturer:: Infineon Manufacturer part number: IPP60R099C6XKSA1 Case style: TO220  
External warehouse:
1725 pcs.
Quantity of pcs. 500+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 2,8022
Packaging:
500
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: Infineon Manufacturer part number: IPP60R099C6XKSA1 Case style: TO220  
External warehouse:
1248 pcs.
Quantity of pcs. 50+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 2,6614
Add to comparison tool
Packaging:
50
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: Infineon Manufacturer part number: IPP60R099C6XKSA1 Case style: TO220  
External warehouse:
25 pcs.
Quantity of pcs. 1+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 3,3005
Add to comparison tool
Packaging:
1
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 230mOhm
Max. drain current: 37,9A
Max. power loss: 278W
Case: TO220
Manufacturer: Infineon Technologies
Max. drain-source voltage: 650V
Transistor type: N-MOSFET
Max. gate-source Voltage: 30V
Operating temperature (range): -55°C ~ 150°C
Mounting: THT