IPP60R099CP

Symbol Micros: TIPP60r099cp

57971

TIPP60r099cp

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Case : TO220

Datasheet

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N-MOSFET 31A 600V 255W 0.099Ω

Parameters

Open channel resistance:	240mOhm
Max. drain current:	31A
Max. power loss:	255W
Case:	TO220
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	650V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: IPP60R099CPXKSA1 Case style: TO220  

External warehouse:

350 pcs.

Quantity of pcs.	50+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	3,2134

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Packaging:
50

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Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	240mOhm
Max. drain current:	31A
Max. power loss:	255W
Case:	TO220
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	650V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	30V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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