IPP60R125CP

Symbol Micros: TIPP60r125cp

114425

TIPP60r125cp

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Case : TO220

Datasheet

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N-MOSFET 25A 650V IPP60R125CPXKSA1

Parameters

Open channel resistance:	300mOhm
Max. drain current:	25A
Max. power loss:	208W
Case:	TO220
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	650V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	300mOhm
Max. drain current:	25A
Max. power loss:	208W
Case:	TO220
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	650V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	30V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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