IPP60R190C6

Symbol Micros: TIPP60r190c6
Contractor Symbol:
Case : TO220
N-MOSFET 20.2A 600V 151W 0.19Ω
Parameters
Open channel resistance: 440mOhm
Max. drain current: 20,2A
Max. power loss: 151W
Case: TO220
Manufacturer: Infineon Technologies
Max. drain-source voltage: 650V
Transistor type: N-MOSFET
Manufacturer:: Infineon Manufacturer part number: IPP60R190C6 RoHS Case style: TO220 Datasheet
In stock:
100 pcs.
Quantity of pcs. 1+ 5+ 50+ 100+ 300+
Net price (EUR) 2,1157 1,6790 1,4618 1,4361 1,4105
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Packaging:
50/100
Manufacturer:: Infineon Manufacturer part number: IPP60R190C6XKSA1 Case style: TO220  
External warehouse:
7448 pcs.
Quantity of pcs. 100+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 1,4105
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Packaging:
50
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: Infineon Manufacturer part number: IPP60R190C6XKSA1 Case style: TO220  
External warehouse:
136 pcs.
Quantity of pcs. 1+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 1,4993
Add to comparison tool
Packaging:
1
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 440mOhm
Max. drain current: 20,2A
Max. power loss: 151W
Case: TO220
Manufacturer: Infineon Technologies
Max. drain-source voltage: 650V
Transistor type: N-MOSFET
Max. gate-source Voltage: 30V
Operating temperature (range): -55°C ~ 150°C
Mounting: THT