IPS60R360PFD7S

Symbol Micros: TIPS60r360pfd7s

351561

TIPS60r360pfd7s

Contractor Symbol:

Case : TO251 (IPACK)

Datasheet

Technical drawing Add to favourites

Mosfet, N-Ch, 600V, 10A IPS60R360PFD7SAKMA1

Parameters

Open channel resistance:	714mOhm
Max. drain current:	10A
Max. power loss:	43W
Case:	TO251 (IPACK)
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	650V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: IPS60R360PFD7SAKMA1 RoHS Case style: TO251 (IPACK) Datasheet

In stock:

15 pcs.

Quantity of pcs.	1+	5+	20+	100+	400+
Net price (EUR)	1,3480	0,9445	0,8023	0,7323	0,7090

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Packaging:
20 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	714mOhm
Max. drain current:	10A
Max. power loss:	43W
Case:	TO251 (IPACK)
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	650V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-40°C ~ 150°C
Mounting:	THT

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