IPT029N08N5ATMA1 

Symbol Micros: TIPT029n08n5
Contractor Symbol:
Case : HSOF8
Transistor N-Channel MOSFET; 80V; 20V; 2,9mOhm; 52A; 168W; -55°C~175°C;
Parameters
Open channel resistance: 2,9mOhm
Max. drain current: 52A
Max. power loss: 168W
Case: HSOF8
Manufacturer: INFINEON
Max. drain-source voltage: 80V
Max. drain-gate voltage: 6V
Manufacturer:: Infineon Manufacturer part number: IPT029N08N5ATMA1 Case style: HSOF8  
External warehouse:
2000 pcs.
Quantity of pcs. 2000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 1,7665
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Packaging:
2000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 2,9mOhm
Max. drain current: 52A
Max. power loss: 168W
Case: HSOF8
Manufacturer: INFINEON
Max. drain-source voltage: 80V
Max. drain-gate voltage: 6V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 175°C
Mounting: SMD