IPW60R041C6

Symbol Micros: TIPW60r041c6

122176

TIPW60r041c6

Contractor Symbol:

Case : TO 3P

Datasheet

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Transistor N-Channel MOSFET; 650V; 30V; 96mOhm; 77,5A; 481W; -55°C ~ 150°C; IPW60R041C6FKSA1

Parameters

Open channel resistance:	96mOhm
Max. drain current:	77,5A
Max. power loss:	481W
Case:	TO 3P
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	650V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: IPW60R041C6 RoHS Case style: TO 3P Datasheet

In stock:

2 pcs.

Quantity of pcs.	1+	2+	4+	10+	20+
Net price (EUR)	18,9408	18,3149	17,8596	17,4392	17,2197

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Packaging:
2 Quantity (multiple: 1)

- +

Manufacturer:: Infineon Manufacturer part number: IPW60R041C6FKSA1 Case style: TO 3P  

External warehouse:

757 pcs.

Quantity of pcs.	1+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	17,2197

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Packaging:
1

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Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	96mOhm
Max. drain current:	77,5A
Max. power loss:	481W
Case:	TO 3P
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	650V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	30V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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