IPW60R041C6

Symbol Micros: TIPW60r041c6
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Case : TO 3P
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Transistor N-Channel MOSFET; 650V; 30V; 96mOhm; 77,5A; 481W; -55°C ~ 150°C; IPW60R041C6FKSA1
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Parameters
Open channel resistance: 96mOhm
Max. drain current: 77,5A
Max. power loss: 481W
Case: TO 3P
Manufacturer: Infineon Technologies
Max. drain-source voltage: 650V
Transistor type: N-MOSFET
Manufacturer:: Infineon Manufacturer part number: IPW60R041C6 RoHS Case style: TO 3P Datasheet
In stock:
2 pcs.
Quantity of pcs. 1+ 2+ 4+ 10+ 20+
Net price (EUR) 18,9629 18,3363 17,8804 17,4596 17,2398
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Packaging:
2
Open channel resistance: 96mOhm
Max. drain current: 77,5A
Max. power loss: 481W
Case: TO 3P
Manufacturer: Infineon Technologies
Max. drain-source voltage: 650V
Transistor type: N-MOSFET
Max. gate-source Voltage: 30V
Operating temperature (range): -55°C ~ 150°C
Mounting: THT

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