IPW60R099C6
Symbol Micros:
TIPW60r099c6
Case : TO 3P
Transistor N-Channel MOSFET; 650V; 30V; 230mOhm; 37,9A; 278W; -55°C ~ 150°C;
Parameters
Open channel resistance: | 230mOhm |
Max. drain current: | 37,9A |
Max. power loss: | 278W |
Case: | TO 3P |
Manufacturer: | Infineon Technologies |
Max. drain-source voltage: | 650V |
Transistor type: | N-MOSFET |
Manufacturer:: Infineon
Manufacturer part number: IPW60R099C6FKSA1 RoHS
Case style: TO 3P
Datasheet
In stock:
30 pcs.
Quantity of pcs. | 1+ | 3+ | 10+ | 30+ | 90+ |
---|---|---|---|---|---|
Net price (EUR) | 5,0417 | 4,6424 | 4,3972 | 4,2734 | 4,2010 |
Manufacturer:: Infineon
Manufacturer part number: IPW60R099C6FKSA1
Case style: TO 3P
External warehouse:
480 pcs.
Quantity of pcs. | 60+ (Need a significantly larger quantity? Ask for price). |
---|---|
Net price (EUR) | 4,2010 |
Manufacturer:: Infineon
Manufacturer part number: IPW60R099C6FKSA1
Case style: TO 3P
External warehouse:
229 pcs.
Quantity of pcs. | 1+ (Need a significantly larger quantity? Ask for price). |
---|---|
Net price (EUR) | 4,2010 |
Open channel resistance: | 230mOhm |
Max. drain current: | 37,9A |
Max. power loss: | 278W |
Case: | TO 3P |
Manufacturer: | Infineon Technologies |
Max. drain-source voltage: | 650V |
Transistor type: | N-MOSFET |
Max. gate-source Voltage: | 30V |
Operating temperature (range): | -55°C ~ 150°C |
Mounting: | THT |
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