IPW60R099C6

Symbol Micros: TIPW60r099c6
Contractor Symbol:
Case : TO 3P
Technical drawing Add to favourites
Transistor N-Channel MOSFET; 650V; 30V; 230mOhm; 37,9A; 278W; -55°C ~ 150°C;
Any questions? We will be happy to answer.
Write sales // micros.com.pl or call: +48 785 054 437
Parameters
Open channel resistance: 230mOhm
Max. drain current: 37,9A
Max. power loss: 278W
Case: TO 3P
Manufacturer: Infineon Technologies
Max. drain-source voltage: 650V
Transistor type: N-MOSFET
Manufacturer:: Infineon Manufacturer part number: IPW60R099C6FKSA1 RoHS Case style: TO 3P Datasheet
In stock:
30 pcs.
Quantity of pcs. 1+ 3+ 10+ 30+ 90+
Net price (EUR) 5,0476 4,6478 4,4023 4,2784 4,2059
Add to comparison tool
Packaging:
30
Open channel resistance: 230mOhm
Max. drain current: 37,9A
Max. power loss: 278W
Case: TO 3P
Manufacturer: Infineon Technologies
Max. drain-source voltage: 650V
Transistor type: N-MOSFET
Max. gate-source Voltage: 30V
Operating temperature (range): -55°C ~ 150°C
Mounting: THT

Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel Delete All Contractor Symbols

Add Symbol


Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel All Contractor Symbols