IPW60R099C6

Symbol Micros: TIPW60r099c6
Contractor Symbol:
Case : TO 3P
Transistor N-Channel MOSFET; 650V; 30V; 230mOhm; 37,9A; 278W; -55°C ~ 150°C;
Parameters
Open channel resistance: 230mOhm
Max. drain current: 37,9A
Max. power loss: 278W
Case: TO 3P
Manufacturer: Infineon Technologies
Max. drain-source voltage: 650V
Transistor type: N-MOSFET
Manufacturer:: Infineon Manufacturer part number: IPW60R099C6FKSA1 RoHS Case style: TO 3P Datasheet
In stock:
30 pcs.
Quantity of pcs. 1+ 3+ 10+ 30+ 90+
Net price (EUR) 5,0417 4,6424 4,3972 4,2734 4,2010
Add to comparison tool
Packaging:
30
Manufacturer:: Infineon Manufacturer part number: IPW60R099C6FKSA1 Case style: TO 3P  
External warehouse:
480 pcs.
Quantity of pcs. 60+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 4,2010
Add to comparison tool
Packaging:
30
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: Infineon Manufacturer part number: IPW60R099C6FKSA1 Case style: TO 3P  
External warehouse:
229 pcs.
Quantity of pcs. 1+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 4,2010
Add to comparison tool
Packaging:
1
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 230mOhm
Max. drain current: 37,9A
Max. power loss: 278W
Case: TO 3P
Manufacturer: Infineon Technologies
Max. drain-source voltage: 650V
Transistor type: N-MOSFET
Max. gate-source Voltage: 30V
Operating temperature (range): -55°C ~ 150°C
Mounting: THT