IPW60R125P6

Symbol Micros: TIPW60r125p6

122177

TIPW60r125p6

Contractor Symbol:

Case : TO 3P

Datasheet

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N-MOSFET 30A 600V 219W 0.125Ω IPW60R125P6XKSA1

Parameters

Open channel resistance:	293mOhm
Max. drain current:	30A
Max. power loss:	219W
Case:	TO 3P
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	650V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: IPW60R125P6XKSA1 RoHS Case style: TO 3P Datasheet

In stock:

30 pcs.

Quantity of pcs.	1+	3+	10+	30+	90+
Net price (EUR)	6,6528	5,6411	5,0209	4,7049	4,5256

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Packaging:
30 Quantity (multiple: 1)

- +

Manufacturer:: Infineon Manufacturer part number: IPW60R125P6XKSA1 Case style: TO 3P  

External warehouse:

240 pcs.

Quantity of pcs.	90+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	4,5256

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Packaging:
30

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	293mOhm
Max. drain current:	30A
Max. power loss:	219W
Case:	TO 3P
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	650V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	30V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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