IPW60R160C6

Symbol Micros: TIPW60r160c6
Contractor Symbol:
Case : TO 3P
Transistor N-Channel MOSFET; 650V; 30V; 370mOhm; 23,8A; 176W; -55°C ~ 150°C; IPW60R160C6FKSA1
Parameters
Open channel resistance: 370mOhm
Max. drain current: 23,8A
Max. power loss: 176W
Case: TO 3P
Manufacturer: Infineon Technologies
Max. drain-source voltage: 650V
Transistor type: N-MOSFET
Manufacturer:: Infineon Manufacturer part number: IPW60R160C6FKSA1 RoHS Case style: TO 3P Datasheet
In stock:
10 pcs.
Quantity of pcs. 1+ 3+ 10+ 30+ 100+
Net price (EUR) 4,7638 4,0095 3,5565 3,3323 3,1969
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Packaging:
10
Manufacturer:: Infineon Manufacturer part number: IPW60R160C6FKSA1 Case style: TO 3P  
External warehouse:
758 pcs.
Quantity of pcs. 90+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 3,1969
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Packaging:
30
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: Infineon Manufacturer part number: IPW60R160C6FKSA1 Case style: TO 3P  
External warehouse:
32 pcs.
Quantity of pcs. 1+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 3,1969
Add to comparison tool
Packaging:
1
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 370mOhm
Max. drain current: 23,8A
Max. power loss: 176W
Case: TO 3P
Manufacturer: Infineon Technologies
Max. drain-source voltage: 650V
Transistor type: N-MOSFET
Max. gate-source Voltage: 30V
Operating temperature (range): -55°C ~ 150°C
Mounting: THT