IPW60R160C6

Symbol Micros: TIPW60r160c6
Contractor Symbol:
Case : TO 3P
Technical drawing Add to favourites
Transistor N-Channel MOSFET; 650V; 30V; 370mOhm; 23,8A; 176W; -55°C ~ 150°C; IPW60R160C6FKSA1
Any questions? We will be happy to answer.
Write sales // micros.com.pl or call: +48 785 054 437
Parameters
Open channel resistance: 370mOhm
Max. drain current: 23,8A
Max. power loss: 176W
Case: TO 3P
Manufacturer: Infineon Technologies
Max. drain-source voltage: 650V
Transistor type: N-MOSFET
Manufacturer:: Infineon Manufacturer part number: IPW60R160C6FKSA1 RoHS Case style: TO 3P Datasheet
In stock:
10 pcs.
Quantity of pcs. 1+ 3+ 10+ 30+ 100+
Net price (EUR) 4,7694 4,0142 3,5607 3,3362 3,2006
Add to comparison tool
Packaging:
10
Open channel resistance: 370mOhm
Max. drain current: 23,8A
Max. power loss: 176W
Case: TO 3P
Manufacturer: Infineon Technologies
Max. drain-source voltage: 650V
Transistor type: N-MOSFET
Max. gate-source Voltage: 30V
Operating temperature (range): -55°C ~ 150°C
Mounting: THT

Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel Delete All Contractor Symbols

Add Symbol


Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel All Contractor Symbols