IPW60R190E6

Symbol Micros: TIPW60r190e6
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Case : TO 3P
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Transistor N-Channel MOSFET; 650V; 30V; 440mOhm; 20,2A; 151W; -55°C ~ 150°C;
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Parameters
Open channel resistance: 440mOhm
Max. drain current: 20,2A
Max. power loss: 151W
Case: TO 3P
Manufacturer: Infineon Technologies
Max. drain-source voltage: 650V
Transistor type: N-MOSFET
Manufacturer:: Infineon Manufacturer part number: IPW60R190E6FKSA1 RoHS Case style: TO 3P Datasheet
In stock:
10 pcs.
Quantity of pcs. 1+ 3+ 10+ 30+ 100+
Net price (EUR) 3,3666 2,7821 2,4385 2,2701 2,1719
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Packaging:
10
Open channel resistance: 440mOhm
Max. drain current: 20,2A
Max. power loss: 151W
Case: TO 3P
Manufacturer: Infineon Technologies
Max. drain-source voltage: 650V
Transistor type: N-MOSFET
Max. gate-source Voltage: 30V
Operating temperature (range): -55°C ~ 150°C
Mounting: THT

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