IPW60R190E6

Symbol Micros: TIPW60r190e6

121381

TIPW60r190e6

Contractor Symbol:

Case : TO 3P

Datasheet

Technical drawing Add to favourites

Transistor N-Channel MOSFET; 650V; 30V; 440mOhm; 20,2A; 151W; -55°C ~ 150°C;

Parameters

Open channel resistance:	440mOhm
Max. drain current:	20,2A
Max. power loss:	151W
Case:	TO 3P
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	650V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: IPW60R190E6FKSA1 RoHS Case style: TO 3P Datasheet

In stock:

10 pcs.

Quantity of pcs.	1+	3+	10+	30+	100+
Net price (EUR)	3,3627	2,7789	2,4356	2,2675	2,1694

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Packaging:
10 Quantity (multiple: 1)

- +

Manufacturer:: Infineon Manufacturer part number: IPW60R190E6FKSA1 Case style: TO 3P  

External warehouse:

119 pcs.

Quantity of pcs.	1+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	2,4796

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Packaging:
1

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Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	440mOhm
Max. drain current:	20,2A
Max. power loss:	151W
Case:	TO 3P
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	650V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	30V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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