IPW60R190P6FKSA1 

Symbol Micros: TIPW60r190p6
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Transistor N-Channel MOSFET; 600V; 20V; 190mOhm; 20,2A; 151W; -55°C~150°C;
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Parameters
Open channel resistance: 190mOhm
Max. drain current: 20,2A
Max. power loss: 151W
Case: TO247
Manufacturer: INFINEON
Max. drain-source voltage: 600V
Max. drain-gate voltage: 10V
Manufacturer:: Infineon Manufacturer part number: IPW60R190P6FKSA1 Case style: TO247  
External warehouse:
23 pcs.
Quantity of pcs. 1+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 2,0895
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Packaging:
1
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 190mOhm
Max. drain current: 20,2A
Max. power loss: 151W
Case: TO247
Manufacturer: INFINEON
Max. drain-source voltage: 600V
Max. drain-gate voltage: 10V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: THT