IRF1010ES smd

Symbol Micros: TIRF1010es

Case : TO263 (D2PAK)

Transistor N-Channel MOSFET; 60V; 20V; 12mOhm; 84A; 200W; -55°C ~ 175°C; IRF1010ESPBF, IRF1010ESTRLPBF

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Parameters

Manufacturer:: International Rectifier Manufacturer part number: IRF1010ES RoHS Case style: TO263t/r (D2PAK) Datasheet

In stock:

20 pcs.

Quantity of pcs.	1+	5+	20+	100+	300+
Net price (EUR)	1,7923	1,3295	1,1627	1,0805	1,0547

Manufacturer:: International Rectifier Manufacturer part number: IRF1010ESTRLPBF RoHS Case style: TO263 (D2PAK) Datasheet

In stock:

10 pcs.

Quantity of pcs.	1+	3+	10+	50+	200+
Net price (EUR)	1,7923	1,4305	1,2238	1,0993	1,0547

Manufacturer:: Infineon Manufacturer part number: IRF1010ESTRLPBF Case style: TO263 (D2PAK)

External warehouse:

23800 pcs.

Quantity of pcs.	800+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	1,0547

Open channel resistance:	12mOhm
Max. drain current:	84A
Max. power loss:	200W
Case:	TO263 (D2PAK)
Manufacturer:	International Rectifier
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD