IRF1010N

Symbol Micros: TIRF1010n
Contractor Symbol:
Case : TO220
Transistor N-Channel MOSFET; 55V; 20V; 11mOhm; 85A; 180W; -55°C ~ 175°C;
Parameters
Open channel resistance: 11mOhm
Max. drain current: 85A
Max. power loss: 180W
Case: TO220
Manufacturer: Infineon Technologies
Max. drain-source voltage: 55V
Transistor type: N-MOSFET
Manufacturer:: International Rectifier Manufacturer part number: IRF1010NPBF RoHS Case style: TO220 Datasheet
In stock:
20 pcs.
Quantity of pcs. 1+ 3+ 10+ 44+ 176+
Net price (EUR) 1,1773 0,8627 0,6911 0,5958 0,5601
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Packaging:
44
Manufacturer:: Infineon Manufacturer part number: IRF1010NPBF Case style: TO220  
External warehouse:
7588 pcs.
Quantity of pcs. 300+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,5601
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Packaging:
100
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: Infineon Manufacturer part number: IRF1010NPBF Case style: TO220  
External warehouse:
860 pcs.
Quantity of pcs. 10+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,6087
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Packaging:
10
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 11mOhm
Max. drain current: 85A
Max. power loss: 180W
Case: TO220
Manufacturer: Infineon Technologies
Max. drain-source voltage: 55V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 175°C
Mounting: THT