IRF1018E

Symbol Micros: TIRF1018e
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Case : TO220
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Transistor N-Channel MOSFET; 60V; 20V; 8,4mOhm; 79A; 110W; -55°C~175°C; Substitute: IRF1018EPBF;
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Parameters
Open channel resistance: 8,4mOhm
Max. drain current: 79A
Max. power loss: 110W
Case: TO220
Manufacturer: International Rectifier
Max. drain-source voltage: 60V
Transistor type: N-MOSFET
Manufacturer:: International Rectifier Manufacturer part number: IRF1018EPBF RoHS Case style: TO220 Datasheet
In stock:
0 pcs.
Quantity of pcs. 1+ 5+ 20+ 50+ 300+
Net price (EUR) 0,9674 0,6402 0,5281 0,4930 0,4603
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Packaging:
50/300
         
 
Item in delivery
Estimated date:
2024-08-01
Quantity of pcs.: 200
Open channel resistance: 8,4mOhm
Max. drain current: 79A
Max. power loss: 110W
Case: TO220
Manufacturer: International Rectifier
Max. drain-source voltage: 60V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 175°C
Mounting: THT

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