IRF1018ES

Symbol Micros: TIRF1018es
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Case : TO263 (D2PAK)
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N-MOSFET HEXFET 60V 79A 110W 0,0084Ω
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Parameters
Open channel resistance: 8,4mOhm
Max. drain current: 79A
Max. power loss: 110W
Case: TO263 (D2PAK)
Manufacturer: Infineon Technologies
Max. drain-source voltage: 60V
Transistor type: N-MOSFET
Manufacturer:: International Rectifier Manufacturer part number: IRF1018ESPBF-GURT RoHS Case style: TO263t/r (D2PAK) Datasheet
In stock:
5 pcs.
Quantity of pcs. 1+ 3+ 10+ 30+ 100+
Net price (EUR) 1,7301 1,3700 1,1666 1,0708 1,0170
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Packaging:
10
Open channel resistance: 8,4mOhm
Max. drain current: 79A
Max. power loss: 110W
Case: TO263 (D2PAK)
Manufacturer: Infineon Technologies
Max. drain-source voltage: 60V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 175°C
Mounting: SMD

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