IRF1018ES
Symbol Micros:
TIRF1018es
Case : TO263 (D2PAK)
N-MOSFET HEXFET 60V 79A 110W 0,0084Ω
Parameters
| Open channel resistance: | 8,4mOhm |
| Max. drain current: | 79A |
| Max. power loss: | 110W |
| Case: | TO263 (D2PAK) |
| Manufacturer: | Infineon Technologies |
| Max. drain-source voltage: | 60V |
| Transistor type: | N-MOSFET |
Manufacturer:: International Rectifier
Manufacturer part number: IRF1018ESPBF-GURT RoHS
Case style: TO263t/r (D2PAK)
Datasheet
In stock:
5 pcs.
| Quantity of pcs. | 1+ | 3+ | 10+ | 30+ | 100+ |
|---|---|---|---|---|---|
| Net price (EUR) | 1,7280 | 1,3684 | 1,1653 | 1,0695 | 1,0158 |
Manufacturer:: Infineon
Manufacturer part number: IRF1018ESTRLPBF
Case style: TO263 (D2PAK)
External warehouse:
2400 pcs.
| Quantity of pcs. | 800+ (Need a significantly larger quantity? Ask for price). |
|---|---|
| Net price (EUR) | 1,0158 |
Manufacturer:: Infineon
Manufacturer part number: IRF1018ESTRLPBF
Case style: TO263 (D2PAK)
External warehouse:
990 pcs.
| Quantity of pcs. | 10+ (Need a significantly larger quantity? Ask for price). |
|---|---|
| Net price (EUR) | 1,0158 |
| Open channel resistance: | 8,4mOhm |
| Max. drain current: | 79A |
| Max. power loss: | 110W |
| Case: | TO263 (D2PAK) |
| Manufacturer: | Infineon Technologies |
| Max. drain-source voltage: | 60V |
| Transistor type: | N-MOSFET |
| Max. gate-source Voltage: | 20V |
| Operating temperature (range): | -55°C ~ 175°C |
| Mounting: | SMD |
Add Symbol
Cancel
All Contractor Symbols