IRF1310NS
Symbol Micros:
TIRF1310ns
Case : TO263 (D2PAK)
N-MOSFET HEXFET 100V 42A 3.8W 0,036 Ohm; IRF1310NSPBF IRF1310NSTRLPBF IRF1310NSPBF-GURT
Parameters
| Open channel resistance: | 36mOhm |
| Max. drain current: | 42A |
| Max. power loss: | 3,8W |
| Case: | TO263 (D2PAK) |
| Manufacturer: | International Rectifier |
| Max. drain-source voltage: | 100V |
| Transistor type: | N-MOSFET |
Manufacturer:: Infineon
Manufacturer part number: IRF1310NSTRLPBF
Case style: TO263 (D2PAK)
External warehouse:
12000 pcs.
| Quantity of pcs. | 800+ (Need a significantly larger quantity? Ask for price). |
|---|---|
| Net price (EUR) | 0,4881 |
Manufacturer:: Infineon
Manufacturer part number: IRF1310NSTRLPBF
Case style: TO263 (D2PAK)
External warehouse:
800 pcs.
| Quantity of pcs. | 800+ (Need a significantly larger quantity? Ask for price). |
|---|---|
| Net price (EUR) | 0,5084 |
Manufacturer:: Infineon
Manufacturer part number: IRF1310NSTRLPBF
Case style: TO263 (D2PAK)
External warehouse:
1330 pcs.
| Quantity of pcs. | 10+ (Need a significantly larger quantity? Ask for price). |
|---|---|
| Net price (EUR) | 0,6045 |
| Open channel resistance: | 36mOhm |
| Max. drain current: | 42A |
| Max. power loss: | 3,8W |
| Case: | TO263 (D2PAK) |
| Manufacturer: | International Rectifier |
| Max. drain-source voltage: | 100V |
| Transistor type: | N-MOSFET |
| Max. gate-source Voltage: | 20V |
| Operating temperature (range): | -55°C ~ 175°C |
| Mounting: | SMD |
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