IRF1312

Symbol Micros: TIRF1312

46054

TIRF1312

Contractor Symbol:

Case : TO220

Datasheet

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N-MOSFET HEXFET 80V 95A 3.8W 0,010Ω

Parameters

Open channel resistance:	10mOhm
Max. drain current:	95A
Max. power loss:	210W
Case:	TO220
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	80V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: International Rectifier Manufacturer part number: IRF1312 RoHS Case style: TO220 Datasheet

In stock:

44 pcs.

Quantity of pcs.	1+	3+	10+	44+	132+
Net price (EUR)	1,5926	1,2120	0,9995	0,8780	0,8383

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Packaging:
44 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	10mOhm
Max. drain current:	95A
Max. power loss:	210W
Case:	TO220
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	80V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	THT

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