IRF1407PBF HXY MOSFET

Symbol Micros: TIRF1407 HXY
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Case : TO220
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Transistor N-Channel MOSFET; 120V; 20V; 7,5mOhm; 120A; 119W; -55°C ~ 150°C;
Parameters
Open channel resistance: 7,5mOhm
Max. drain current: 120A
Max. power loss: 119W
Case: TO220
Manufacturer: HXY MOSFET
Max. drain-source voltage: 120V
Transistor type: N-MOSFET
Manufacturer:: HXY MOSFET Manufacturer part number: IRF1407PBF-HXY RoHS Case style: TO220 Datasheet
In stock:
50 pcs.
Quantity of pcs. 1+ 3+ 10+ 50+ 200+
Net price (EUR) 1,4085 1,0748 0,8889 0,7793 0,7412
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Packaging:
50
Open channel resistance: 7,5mOhm
Max. drain current: 120A
Max. power loss: 119W
Case: TO220
Manufacturer: HXY MOSFET
Max. drain-source voltage: 120V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: THT

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