IRF200P222 

Symbol Micros: TIRF200P222

129258

TIRF200P222

Contractor Symbol:

Case : TO247

Datasheet

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Transistor N-Channel MOSFET; 200V; 20V; 6,6mOhm; 182A; 556W; -55°C~175°C; Substitute: IRF200P223;

Parameters

Open channel resistance:	6,6mOhm
Max. drain current:	182A
Max. power loss:	556W
Case:	TO247
Manufacturer:	INFINEON
Max. drain-source voltage:	200V
Max. drain-gate voltage:	10V

All parameters

Manufacturer:: Infineon Manufacturer part number: IRF200P223 Case style: TO247  

External warehouse:

674 pcs.

Quantity of pcs.	50+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	2,9058

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Packaging:
25

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Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	6,6mOhm
Max. drain current:	182A
Max. power loss:	556W
Case:	TO247
Manufacturer:	INFINEON
Max. drain-source voltage:	200V
Max. drain-gate voltage:	10V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	THT

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