IRF3710S

Symbol Micros: TIRF3710s

34883

TIRF3710s

Contractor Symbol:

Case : TO263 (D2PAK)

Datasheet

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Transistor N-Channel MOSFET; 100V; 20V; 23mOhm; 57A; 200W; -55°C ~ 175°C;

Parameters

Open channel resistance:	23mOhm
Max. drain current:	57A
Max. power loss:	200W
Case:	TO263 (D2PAK)
Manufacturer:	International Rectifier
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: IRF3710STRLPBF RoHS Case style: TO263t/r (D2PAK)  

In stock:

394 pcs.

Quantity of pcs.	1+	5+	20+	100+	400+
Net price (EUR)	1,4945	1,0462	0,8897	0,8126	0,7870

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Packaging:
800 Quantity (multiple: 1)

- +

Manufacturer:: Infineon Manufacturer part number: IRF3710STRLPBF Case style: TO263 (D2PAK)  

External warehouse:

1400 pcs.

Quantity of pcs.	1+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,7870

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Packaging:
1

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	23mOhm
Max. drain current:	57A
Max. power loss:	200W
Case:	TO263 (D2PAK)
Manufacturer:	International Rectifier
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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