IRF5210PBF

Symbol Micros: TIRF5210
Contractor Symbol:
Case : TO220
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Transistor P-Channel MOSFET; 100V; 20V; 60mOhm; 40A; 200W; -55°C ~ 175°C; Replacement: IRF5210PBF; IRF5210;
Parameters
Open channel resistance: 60mOhm
Max. drain current: 40A
Max. power loss: 200W
Case: TO220
Manufacturer: Infineon (IRF)
Max. drain-source voltage: 100V
Transistor type: P-MOSFET
Manufacturer:: International Rectifier Manufacturer part number: IRF5210 RoHS Case style: TO220 Datasheet
In stock:
160 pcs.
Quantity of pcs. 1+ 5+ 50+ 150+ 450+
Net price (EUR) 1,4793 1,0386 0,8314 0,7956 0,7790
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Packaging:
50/450
Manufacturer:: Infineon Manufacturer part number: IRF5210PBF Case style: TO220  
External warehouse:
6289 pcs.
Quantity of pcs. 200+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,7790
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Packaging:
100
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: Infineon Manufacturer part number: IRF5210PBF Case style: TO220  
External warehouse:
3060 pcs.
Quantity of pcs. 10+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,7858
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Packaging:
10
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 60mOhm
Max. drain current: 40A
Max. power loss: 200W
Case: TO220
Manufacturer: Infineon (IRF)
Max. drain-source voltage: 100V
Transistor type: P-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 175°C
Mounting: THT

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