IRF530A

Symbol Micros: TIRF530 a

43237

TIRF530 a

Contractor Symbol:

Case : TO220

Datasheet

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N-MOSFET 14A 100V 55W 110&mohm;

Parameters

Open channel resistance:	110mOhm
Max. drain current:	14A
Max. power loss:	55W
Case:	TO220
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: ON-Semicoductor Manufacturer part number: IRF530A Case style: TO220  

External warehouse:

1322 pcs.

Quantity of pcs.	250+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,4741

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Packaging:
50

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Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	110mOhm
Max. drain current:	14A
Max. power loss:	55W
Case:	TO220
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	THT

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