IRF530N JSMICRO

Symbol Micros: TIRF530n JSM
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Case : TO220
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Transistor N-Channel MOSFET; 100V; 20V; 38mOhm; 33A; 110W; -55°C ~ 150°C; Equivalent: IRF530PBF; IRF530PBF-BE3; IRF530NPBF; SP001570120;
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Parameters
Open channel resistance: 38mOhm
Max. drain current: 33A
Max. power loss: 110W
Case: TO220
Manufacturer: JSMICRO
Max. drain-source voltage: 100V
Transistor type: N-MOSFET
Manufacturer:: JSMicro Semiconductor Manufacturer part number: IRF530N RoHS Case style: TO220 Datasheet
In stock:
100 pcs.
Quantity of pcs. 2+ 10+ 50+ 100+ 400+
Net price (EUR) 0,5865 0,3668 0,2874 0,2710 0,2547
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Packaging:
50/100
Open channel resistance: 38mOhm
Max. drain current: 33A
Max. power loss: 110W
Case: TO220
Manufacturer: JSMICRO
Max. drain-source voltage: 100V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: THT

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