IRF540S

Symbol Micros: TIRF540s
Contractor Symbol:
Case : TO263 (D2PAK)
N-MOSFET HEXFET 100V 28A 3.7W 0,077Ω
Parameters
Open channel resistance: 77mOhm
Max. drain current: 28A
Max. power loss: 150W
Case: TO263 (D2PAK)
Manufacturer: VISHAY
Max. drain-source voltage: 100V
Transistor type: N-MOSFET
Manufacturer:: Siliconix Manufacturer part number: IRF540S RoHS Case style: TO263 (D2PAK)  
In stock:
290 pcs.
Quantity of pcs. 1+ 5+ 50+ 100+ 500+
Net price (EUR) 1,2073 0,8033 0,6188 0,5978 0,5745
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Packaging:
50/500
Manufacturer:: Vishay Manufacturer part number: IRF540SPBF Case style: TO263 (D2PAK)  
External warehouse:
5000 pcs.
Quantity of pcs. 300+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,5745
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Packaging:
50
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: Vishay Manufacturer part number: IRF540SPBF Case style: TO263 (D2PAK)  
External warehouse:
1900 pcs.
Quantity of pcs. 250+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,5745
Add to comparison tool
Packaging:
50
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 77mOhm
Max. drain current: 28A
Max. power loss: 150W
Case: TO263 (D2PAK)
Manufacturer: VISHAY
Max. drain-source voltage: 100V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 175°C
Mounting: SMD