IRF5801

Symbol Micros: TIRF5801

112219

TIRF5801

Contractor Symbol:

Case : TSOT23-6

Datasheet

Technical drawing Add to favourites

Transistor N-Channel MOSFET; 200V; 30V; 2,2Ohm; 600mA; 2W; -55°C ~ 150°C;

Parameters

Open channel resistance:	2,2Ohm
Max. drain current:	600mA
Max. power loss:	2W
Case:	TSOT23-6
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	200V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: IRF5801TR RoHS Case style: TSOT23-6 t/r  

In stock:

98 pcs.

Quantity of pcs.	3+	20+	100+	300+	1000+
Net price (EUR)	0,3946	0,2174	0,1709	0,1583	0,1518

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Packaging:
100 Quantity (multiple: 1)

- +

Manufacturer:: Infineon Manufacturer part number: IRF5801TRPBF Case style: TSOT23-6  

External warehouse:

3000 pcs.

Quantity of pcs.	3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,1518

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Packaging:
3000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	2,2Ohm
Max. drain current:	600mA
Max. power loss:	2W
Case:	TSOT23-6
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	200V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	30V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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