IRF5803
Symbol Micros:
TIRF5803
Case : TSOT23-6
Transistor P-Channel MOSFET; 40V; 20V; 190mOhm; 3,4A; 2W; -55°C ~ 150°C;
Parameters
Open channel resistance: | 190mOhm |
Max. drain current: | 3,4A |
Max. power loss: | 2W |
Case: | TSOT23-6 |
Manufacturer: | Infineon Technologies |
Max. drain-source voltage: | 40V |
Transistor type: | P-MOSFET |
Manufacturer:: Infineon
Manufacturer part number: IRF5803TR RoHS
Case style: TSOT23-6 t/r
Datasheet
In stock:
2000 pcs.
Quantity of pcs. | 2+ | 10+ | 50+ | 200+ | 1000+ |
---|---|---|---|---|---|
Net price (EUR) | 0,5207 | 0,3153 | 0,2429 | 0,2183 | 0,2078 |
Manufacturer:: Infineon
Manufacturer part number: IRF5803TRPBF
Case style: TSOT23-6
External warehouse:
477000 pcs.
Quantity of pcs. | 3000+ (Need a significantly larger quantity? Ask for price). |
---|---|
Net price (EUR) | 0,2078 |
Manufacturer:: Infineon
Manufacturer part number: IRF5803TRPBF
Case style: TSOT23-6
External warehouse:
3000 pcs.
Quantity of pcs. | 3000+ (Need a significantly larger quantity? Ask for price). |
---|---|
Net price (EUR) | 0,2078 |
Manufacturer:: Infineon
Manufacturer part number: IRF5803TRPBF
Case style: TSOT23-6
External warehouse:
3000 pcs.
Quantity of pcs. | 50+ (Need a significantly larger quantity? Ask for price). |
---|---|
Net price (EUR) | 0,2078 |
Open channel resistance: | 190mOhm |
Max. drain current: | 3,4A |
Max. power loss: | 2W |
Case: | TSOT23-6 |
Manufacturer: | Infineon Technologies |
Max. drain-source voltage: | 40V |
Transistor type: | P-MOSFET |
Max. gate-source Voltage: | 20V |
Operating temperature (range): | -55°C ~ 150°C |
Mounting: | SMD |
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