IRF630NS smd

Symbol Micros: TIRF630ns
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Case : TO263 (D2PAK)
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N-MOSFET 9.3A 200V 82W 0.3Ω Replacement: IRF630NSPBF
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Parameters
Open channel resistance: 300mOhm
Max. drain current: 9,3A
Max. power loss: 82W
Case: TO263 (D2PAK)
Manufacturer: International Rectifier
Max. drain-source voltage: 200V
Transistor type: N-MOSFET
Manufacturer:: International Rectifier Manufacturer part number: IRF630NS RoHS Case style: TO263 (D2PAK) Datasheet
In stock:
50 pcs.
Quantity of pcs. 1+ 3+ 10+ 20+ 50+
Net price (EUR) 0,9773 0,7014 0,5518 0,5050 0,4652
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Packaging:
50
Open channel resistance: 300mOhm
Max. drain current: 9,3A
Max. power loss: 82W
Case: TO263 (D2PAK)
Manufacturer: International Rectifier
Max. drain-source voltage: 200V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 175°C
Mounting: SMD

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