IRF640NS smd

Symbol Micros: TIRF640ns

35313

TIRF640ns

Contractor Symbol:

Case : TO263 (D2PAK)

Datasheet

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Transistor N-Channel MOSFET; 200V; 20V; 150mOhm; 18A; 150W; -55°C ~ 175°C;

Parameters

Open channel resistance:	150mOhm
Max. drain current:	18A
Max. power loss:	150W
Case:	TO263 (D2PAK)
Manufacturer:	International Rectifier
Max. drain-source voltage:	200V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: International Rectifier Manufacturer part number: IRF640NS RoHS Case style: TO263 (D2PAK) Datasheet

In stock:

50 pcs.

Quantity of pcs.	1+	3+	10+	50+	200+
Net price (EUR)	1,5319	1,2213	1,0462	0,9387	0,9014

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Packaging:
50 Quantity (multiple: 1)

- +

Manufacturer:: Infineon Manufacturer part number: IRF640NSTRLPBF Case style: TO263 (D2PAK)  

External warehouse:

4000 pcs.

Quantity of pcs.	800+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,9014

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Packaging:
800

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

Manufacturer:: Infineon Manufacturer part number: IRF640NSTRLPBF Case style: TO263 (D2PAK)  

External warehouse:

4590 pcs.

Quantity of pcs.	10+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,9014

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Packaging:
10

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

Manufacturer:: Infineon Manufacturer part number: IRF640NSTRLPBF Case style: TO263 (D2PAK)  

External warehouse:

6400 pcs.

Quantity of pcs.	800+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,9014

Add to comparison tool Add inquiry (RFQ)

Packaging:
800

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	150mOhm
Max. drain current:	18A
Max. power loss:	150W
Case:	TO263 (D2PAK)
Manufacturer:	International Rectifier
Max. drain-source voltage:	200V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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