IRF6645TRPBF Infineon

Symbol Micros: TIRF6645

109331

TIRF6645

Contractor Symbol:

Case : DirectFET

Datasheet

Technical drawing Add to favourites

N-MOSFET 100V 5.7A 35mΩ 2.2W

Parameters

Open channel resistance:	35mOhm
Max. drain current:	5,7A
Max. power loss:	2,2W
Case:	DirectFET
Manufacturer:	Infineon (IRF)
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: International Rectifier Manufacturer part number: IRF6645TR RoHS Case style: DirectFET Datasheet

In stock:

1 pcs.

Quantity of pcs.	1+	5+	20+	100+	300+
Net price (EUR)	1,7866	1,3245	1,1577	1,0767	1,0505

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Packaging:
20 Quantity (multiple: 1)

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Manufacturer:: Infineon Manufacturer part number: IRF6645TR RoHS Case style: DirectFET  

In stock:

46 pcs.

Quantity of pcs.	1+	3+	10+	50+	200+
Net price (EUR)	1,7366	1,3864	1,1863	1,0648	1,0219

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Packaging:
50 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	35mOhm
Max. drain current:	5,7A
Max. power loss:	2,2W
Case:	DirectFET
Manufacturer:	Infineon (IRF)
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-40°C ~ 150°C
Mounting:	SMD

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