IRF7306TRPBF

Symbol Micros: TIRF7306
Contractor Symbol:
Case : SOP08
Transistor 2xP-Channel MOSFET; 30V; 20V; 160mOhm; 3,6A; 2W; -55°C ~ 150°C; Replacement: IRF7306PBF (SPQ95); IRF7306TRPBF (4K/REEL); IRF7306; IRF7306PBF-GURT; IRF7306; IRF7306TRPBF;
Any questions? We will be happy to answer.
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Parameters
Open channel resistance: 160mOhm
Max. drain current: 3,6A
Max. power loss: 2W
Case: SOP08
Manufacturer: International Rectifier
Max. drain-source voltage: 30V
Transistor type: 2xP-MOSFET
Manufacturer:: Infineon Manufacturer part number: IRF7306TR RoHS Case style: SOP08t/r  
In stock:
3122 pcs.
Quantity of pcs. 2+ 10+ 50+ 200+ 1000+
Net price (EUR) 0,9360 0,5943 0,4680 0,4259 0,4071
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Packaging:
4000
Manufacturer:: Infineon Manufacturer part number: IRF7306TRPBF Case style: SOP08  
External warehouse:
16000 pcs.
Quantity of pcs. 4000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,4071
Add to comparison tool
Packaging:
4000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: Infineon Manufacturer part number: IRF7306TRPBF Case style: SOP08  
External warehouse:
4000 pcs.
Quantity of pcs. 50+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,4071
Add to comparison tool
Packaging:
50
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 160mOhm
Max. drain current: 3,6A
Max. power loss: 2W
Case: SOP08
Manufacturer: International Rectifier
Max. drain-source voltage: 30V
Transistor type: 2xP-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD
Detailed description

Producent: International Rectifier
Typ tranzystora: P-MOSFET x2
Polaryzacja: unipolarny
Rodzaj tranzystora: HEXFET
Napięcie dren-źródło: -30V
Prąd drenu: -3.6A
Moc: 2W
Obudowa: SO8
Napięcie bramka-źródło: 20V
Rezystancja w stanie przewodzenia: 160mΩ
Rezystancja termiczna złącze-otoczenie: 62.5K/W
Montaż: SMD
Ładunek bramki: 16.7nC