IRF7811AV

Symbol Micros: TIRF7811av

40745

TIRF7811av

Contractor Symbol:

Case : SOP08

Datasheet

Technical drawing Add to favourites

N-MOSFET HEXFET 10.8A 30V 2.5W 0.014Ω

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Parameters

Open channel resistance:	14mOhm
Max. drain current:	10,8A
Max. power loss:	2,5W
Case:	SOP08
Manufacturer:	Infineon (IRF)
Max. drain-source voltage:	30V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: VBsemi Manufacturer part number: IRF7811AVTR-VB RoHS Case style: SOP08t/r  

In stock:

100 pcs.

Quantity of pcs.	2+	10+	30+	100+	400+
Net price (EUR)	0,7324	0,4586	0,3814	0,3393	0,3182

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Packaging:
100 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	14mOhm
Max. drain current:	10,8A
Max. power loss:	2,5W
Case:	SOP08
Manufacturer:	Infineon (IRF)
Max. drain-source voltage:	30V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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