IRF7855

Symbol Micros: TIRF7855
Contractor Symbol:
Case : SOP08
N-MOSFET HEXFET 12A 60V 2.5W 0.0094Ω IRF7855PBF IRF7855TRPBF IRF7855PBF-GURT
Parameters
Open channel resistance: 9,4mOhm
Max. drain current: 12A
Max. power loss: 2,5W
Case: SOP08
Manufacturer: Infineon Technologies
Max. drain-source voltage: 60V
Transistor type: N-MOSFET
Manufacturer:: Infineon Manufacturer part number: IRF7855TRPBF Case style: SOP08  
External warehouse:
4950 pcs.
Quantity of pcs. 50+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,5015
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Packaging:
50
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: Infineon Manufacturer part number: IRF7855TRPBF Case style: SOP08  
External warehouse:
8000 pcs.
Quantity of pcs. 4000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,4226
Add to comparison tool
Packaging:
4000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: Infineon Manufacturer part number: IRF7855TRPBF Case style: SOP08  
External warehouse:
28000 pcs.
Quantity of pcs. 4000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,4057
Add to comparison tool
Packaging:
4000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 9,4mOhm
Max. drain current: 12A
Max. power loss: 2,5W
Case: SOP08
Manufacturer: Infineon Technologies
Max. drain-source voltage: 60V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD