IRF7862

Symbol Micros: TIRF7862

43041

TIRF7862

Contractor Symbol:

Case : SOP08

Datasheet

Technical drawing Add to favourites

N-MOSFET HEXFET 21A 30V 2.5W 0.0037Ω

Parameters

Open channel resistance:	4,5mOhm
Max. drain current:	21A
Max. power loss:	2,5W
Case:	SOP08
Manufacturer:	Infineon (IRF)
Max. drain-source voltage:	30V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: IRF7862TRPBF Case style: SOP08  

External warehouse:

8000 pcs.

Quantity of pcs.	4000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,3450

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Packaging:
4000

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Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	4,5mOhm
Max. drain current:	21A
Max. power loss:	2,5W
Case:	SOP08
Manufacturer:	Infineon (IRF)
Max. drain-source voltage:	30V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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