IRF8010
Symbol Micros:
TIRF8010
Case : TO220
N-MOSFET HEXFET 80A 100V 260W 0.015Ω
Parameters
Open channel resistance: | 15mOhm |
Max. drain current: | 80A |
Max. power loss: | 260W |
Case: | TO220 |
Manufacturer: | Infineon (IRF) |
Max. drain-source voltage: | 100V |
Transistor type: | N-MOSFET |
Manufacturer:: International Rectifier
Manufacturer part number: IRF8010 RoHS
Case style: TO220
Datasheet
In stock:
137 pcs.
Quantity of pcs. | 1+ | 3+ | 10+ | 47+ | 188+ |
---|---|---|---|---|---|
Net price (EUR) | 2,0129 | 1,6486 | 1,4361 | 1,3077 | 1,2587 |
Manufacturer:: Infineon
Manufacturer part number: IRF8010PBF
Case style: TO220
External warehouse:
10938 pcs.
Quantity of pcs. | 300+ (Need a significantly larger quantity? Ask for price). |
---|---|
Net price (EUR) | 1,2587 |
Manufacturer:: Infineon
Manufacturer part number: IRF8010PBF
Case style: TO220
External warehouse:
110 pcs.
Quantity of pcs. | 1+ (Need a significantly larger quantity? Ask for price). |
---|---|
Net price (EUR) | 1,2587 |
Open channel resistance: | 15mOhm |
Max. drain current: | 80A |
Max. power loss: | 260W |
Case: | TO220 |
Manufacturer: | Infineon (IRF) |
Max. drain-source voltage: | 100V |
Transistor type: | N-MOSFET |
Max. gate-source Voltage: | 20V |
Operating temperature (range): | -55°C ~ 175°C |
Mounting: | THT |
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