IRF8010S

Symbol Micros: TIRF8010s

40752

TIRF8010s

Contractor Symbol:

Case : TO263 (D2PAK)

Datasheet

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N-MOSFET HEXFET 80A 100V 260W 0.015Ω

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Parameters

Open channel resistance:	15mOhm
Max. drain current:	80A
Max. power loss:	260W
Case:	TO263 (D2PAK)
Manufacturer:	Infineon (IRF)
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: IRF8010STRLPBF Case style: TO263 (D2PAK)  

External warehouse:

32800 pcs.

Quantity of pcs.	800+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,7979

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Packaging:
800

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Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	15mOhm
Max. drain current:	80A
Max. power loss:	260W
Case:	TO263 (D2PAK)
Manufacturer:	Infineon (IRF)
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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