IRF840S smd

Symbol Micros: TIRF840s

30819

TIRF840s

Contractor Symbol:

Case : TO263 (D2PAK)

Datasheet

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N-MOSFET 8A 500V 125W 0.85Ω

Parameters

Open channel resistance:	850mOhm
Max. drain current:	8A
Max. power loss:	125W
Case:	TO263 (D2PAK)
Manufacturer:	VISHAY
Max. drain-source voltage:	500V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Siliconix Manufacturer part number: IRF840SPBF RoHS Case style: TO263 (D2PAK)  

In stock:

40 pcs.

Quantity of pcs.	1+	5+	50+	150+	300+
Net price (EUR)	1,2851	0,8970	0,7157	0,6878	0,6762

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Packaging:
50/150 Quantity (multiple: 1)

- +

Manufacturer:: Vishay Manufacturer part number: IRF840SPBF Case style: TO263 (D2PAK)  

External warehouse:

2125 pcs.

Quantity of pcs.	25+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,6762

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Packaging:
25

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	850mOhm
Max. drain current:	8A
Max. power loss:	125W
Case:	TO263 (D2PAK)
Manufacturer:	VISHAY
Max. drain-source voltage:	500V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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