IRF8910

Symbol Micros: TIRF8910

77949

TIRF8910

Contractor Symbol:

Case : SOP08

Datasheet

Technical drawing Add to favourites

N-MOSFET HEXFET 10A 20V 2W 0.0134Ω

Parameters

Open channel resistance:	18,3mOhm
Max. drain current:	10A
Max. power loss:	2W
Case:	SOP08
Manufacturer:	Infineon (IRF)
Max. drain-source voltage:	20V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: International Rectifier Manufacturer part number: IRF8910TR RoHS Case style: SOP08t/r Datasheet

In stock:

100 pcs.

Quantity of pcs.	2+	10+	30+	100+	400+
Net price (EUR)	0,8850	0,5558	0,4624	0,4110	0,3853

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Packaging:
100 Quantity (multiple: 1)

- +

Manufacturer:: Infineon Manufacturer part number: IRF8910TRPBF Case style: SOP08  

External warehouse:

2800 pcs.

Quantity of pcs.	1+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,3853

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Packaging:
1

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Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	18,3mOhm
Max. drain current:	10A
Max. power loss:	2W
Case:	SOP08
Manufacturer:	Infineon (IRF)
Max. drain-source voltage:	20V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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