IRF9910TRPBF

Symbol Micros: TIRF9910 VBS

403850

TIRF9910 VBS

Contractor Symbol:

Case : SOP08

Datasheet

Technical drawing Add to favourites

Transistor N-Channel MOSFET; 20V; 12V; 4,3Ohm; 10A; 2,7W; -55°C~150°C; IRF9910TRPBF-VB;

Parameters

Open channel resistance:	1,3Ohm
Max. drain current:	10A
Max. power loss:	2,7W
Case:	SOP08
Manufacturer:	VBS
Max. drain-source voltage:	20V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: VBsemi Manufacturer part number: IRF9910TRPBF-VB RoHS Case style: SOP08t/r Datasheet

In stock:

100 pcs.

Quantity of pcs.	2+	10+	30+	100+	400+
Net price (EUR)	0,7841	0,4909	0,4075	0,3646	0,3408

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Packaging:
100 Quantity (multiple: 1)

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Item in delivery

Estimated date:
2025-04-30

Quantity of pcs.: 100

• Parameters

Open channel resistance:	1,3Ohm
Max. drain current:	10A
Max. power loss:	2,7W
Case:	SOP08
Manufacturer:	VBS
Max. drain-source voltage:	20V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	12V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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