IRF9Z34NS smd

Symbol Micros: TIRF9Z34ns
Contractor Symbol:
Case : TO263 (D2PAK)
P-MOSFET 19A 55V 68W 0.032Ω IRF9Z34NS IRF9Z34NSPBF IRF9Z34NSTRRPBF IRF9Z34NSTRLPBF
Parameters
Open channel resistance: 100mOhm
Max. drain current: 19A
Max. power loss: 68W
Case: TO263 (D2PAK)
Manufacturer: Infineon (IRF)
Max. drain-source voltage: 55V
Transistor type: P-MOSFET
Manufacturer:: Infineon Manufacturer part number: IRF9Z34NSTR RoHS Case style: TO263 (D2PAK)  
In stock:
350 pcs.
Quantity of pcs. 1+ 5+ 20+ 100+ 500+
Net price (EUR) 1,0747 0,7149 0,5911 0,5327 0,5117
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Packaging:
800
Manufacturer:: Infineon Manufacturer part number: IRF9Z34NSTRLPBF Case style: TO263 (D2PAK)  
External warehouse:
1510 pcs.
Quantity of pcs. 10+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,5117
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Packaging:
10
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: Infineon Manufacturer part number: IRF9Z34NSTRLPBF Case style: TO263 (D2PAK)  
External warehouse:
8800 pcs.
Quantity of pcs. 800+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,5117
Add to comparison tool
Packaging:
800
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 100mOhm
Max. drain current: 19A
Max. power loss: 68W
Case: TO263 (D2PAK)
Manufacturer: Infineon (IRF)
Max. drain-source voltage: 55V
Transistor type: P-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 175°C
Mounting: SMD