IRFB11N50A

Symbol Micros: TIRFB11n50a
Contractor Symbol:
Case : TO220
N-MOSFET 500V 11A 170W 0.520Ω
Any questions? We will be happy to answer.
Write sales // micros.com.pl or call: +48 785 054 437
Parameters
Open channel resistance: 520mOhm
Max. drain current: 11A
Max. power loss: 170W
Case: TO220
Manufacturer: VISHAY
Max. drain-source voltage: 500V
Transistor type: N-MOSFET
Manufacturer:: Vishay Manufacturer part number: IRFB11N50A RoHS Case style: TO220 Datasheet
In stock:
4 pcs.
Quantity of pcs. 1+ 3+ 10+ 50+ 200+
Net price (EUR) 1,5454 1,1807 0,9773 0,8557 0,8136
Add to comparison tool
Packaging:
50/200
Manufacturer:: Siliconix Manufacturer part number: IRFB11N50APBF RoHS Case style: TO220  
In stock:
50 pcs.
Quantity of pcs. 1+ 3+ 10+ 50+ 200+
Net price (EUR) 1,5454 1,1807 0,9773 0,8557 0,8136
Add to comparison tool
Packaging:
50
Open channel resistance: 520mOhm
Max. drain current: 11A
Max. power loss: 170W
Case: TO220
Manufacturer: VISHAY
Max. drain-source voltage: 500V
Transistor type: N-MOSFET
Max. gate-source Voltage: 30V
Operating temperature (range): -55°C ~ 150°C
Mounting: THT