IRFB23N20D

Symbol Micros: TIRFB23n20d

46282

TIRFB23n20d

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Case : TO220

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N-MOSFET HEXFET 24A 200V 3.8W 0.1Ω

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Parameters

Open channel resistance:	100mOhm
Max. drain current:	24A
Max. power loss:	170W
Case:	TO220
Manufacturer:	Infineon (IRF)
Max. drain-source voltage:	200V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	100mOhm
Max. drain current:	24A
Max. power loss:	170W
Case:	TO220
Manufacturer:	Infineon (IRF)
Max. drain-source voltage:	200V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	30V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	THT

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