IRFB3006

Symbol Micros: TIRFB3006
Contractor Symbol:
Case : TO220
N-MOSFET HEXFET 195A 60V 375W 0.0025Ω
Parameters
Open channel resistance: 2,5mOhm
Max. drain current: 270A
Max. power loss: 375W
Case: TO220
Manufacturer: Infineon (IRF)
Max. drain-source voltage: 60V
Transistor type: N-MOSFET
Manufacturer:: International Rectifier Manufacturer part number: IRFB3006 RoHS Case style: TO220 Datasheet
In stock:
42 pcs.
Quantity of pcs. 1+ 3+ 10+ 50+ 150+
Net price (EUR) 3,2576 2,7018 2,3749 2,1694 2,1017
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Packaging:
50/150
Manufacturer:: Infineon Manufacturer part number: IRFB3006PBF Case style: TO220  
External warehouse:
890 pcs.
Quantity of pcs. 200+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 2,1017
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Packaging:
100
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: Infineon Manufacturer part number: IRFB3006GPBF Case style: TO220  
External warehouse:
935 pcs.
Quantity of pcs. 100+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 2,1017
Add to comparison tool
Packaging:
100
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: Infineon Manufacturer part number: IRFB3006PBF Case style: TO220  
External warehouse:
90 pcs.
Quantity of pcs. 10+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 2,1017
Add to comparison tool
Packaging:
10
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 2,5mOhm
Max. drain current: 270A
Max. power loss: 375W
Case: TO220
Manufacturer: Infineon (IRF)
Max. drain-source voltage: 60V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 175°C
Mounting: THT