IRFB3607

Symbol Micros: TIRFB3607
Contractor Symbol:
Case : TO220
N-MOSFET HEXFET 80A 75V 140W 0.009ohm
Parameters
Open channel resistance: 9mOhm
Max. drain current: 80A
Max. power loss: 140W
Case: TO220
Manufacturer: Infineon (IRF)
Max. drain-source voltage: 75V
Transistor type: N-MOSFET
Manufacturer:: Infineon Manufacturer part number: IRFB3607 RoHS Case style: TO220  
In stock:
670 pcs.
Quantity of pcs. 1+ 3+ 10+ 50+ 200+
Net price (EUR) 1,0975 0,8056 0,6468 0,5558 0,5231
Add to comparison tool
Packaging:
50/1000
Manufacturer:: Infineon Manufacturer part number: IRFB3607PBF Case style: TO220  
External warehouse:
5731 pcs.
Quantity of pcs. 400+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,5231
Add to comparison tool
Packaging:
100
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: Infineon Manufacturer part number: IRFB3607PBF Case style: TO220  
External warehouse:
2590 pcs.
Quantity of pcs. 10+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,5231
Add to comparison tool
Packaging:
10
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 9mOhm
Max. drain current: 80A
Max. power loss: 140W
Case: TO220
Manufacturer: Infineon (IRF)
Max. drain-source voltage: 75V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 175°C
Mounting: THT