IRFB59N10D

Symbol Micros: TIRFB59n10d

46299

TIRFB59n10d

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Case : TO220

Datasheet

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N-MOSFET HEXFET 59A 100V 3.8W 0.025Ω

Parameters

Open channel resistance:	25mOhm
Max. drain current:	59A
Max. power loss:	200W
Case:	TO220
Manufacturer:	Infineon (IRF)
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: IRFB59N10D RoHS Case style: TO220  

In stock:

50 pcs.

Quantity of pcs.	1+	3+	10+	50+	200+
Net price (EUR)	1,6425	1,2546	1,0374	0,9089	0,8645

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Packaging:
50 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	25mOhm
Max. drain current:	59A
Max. power loss:	200W
Case:	TO220
Manufacturer:	Infineon (IRF)
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	30V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	THT

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