IRFB9N65A

Symbol Micros: TIRFB9n65a

16421

TIRFB9n65a

Contractor Symbol:

Case : TO220

Datasheet

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N-MOSFET 8,5A 650V 167W 0.93Ω

Parameters

Open channel resistance:	930mOhm
Max. drain current:	8,5A
Max. power loss:	167W
Case:	TO220
Manufacturer:	VISHAY
Max. drain-source voltage:	650V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: International Rectifier Manufacturer part number: IRFB9N65A Case style: TO220  

In stock:

8 pcs.

Quantity of pcs.	1+	5+	50+	250+	500+
Net price (EUR)	0,9808	0,6515	0,5044	0,4740	0,4670

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Packaging:
50/250 Quantity (multiple: 1)

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Manufacturer:: Vishay Manufacturer part number: IRFB9N65A RoHS Case style: TO220 Datasheet

In stock:

200 pcs.

Quantity of pcs.	1+	5+	50+	200+	400+
Net price (EUR)	0,9808	0,6515	0,5021	0,4740	0,4670

Add to comparison tool Add inquiry (RFQ)

Packaging:
50/200 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	930mOhm
Max. drain current:	8,5A
Max. power loss:	167W
Case:	TO220
Manufacturer:	VISHAY
Max. drain-source voltage:	650V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	30V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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