IRFBE20

Symbol Micros: TIRFBE20

46026

TIRFBE20

Contractor Symbol:

Case : TO220

Datasheet

Technical drawing Add to favourites

N-MOSFET 1.8A 800V 54W 6.5Ω

Parameters

Open channel resistance:	6,5Ohm
Max. drain current:	1,8A
Max. power loss:	54W
Case:	TO220
Manufacturer:	VISHAY
Max. drain-source voltage:	800V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Siliconix Manufacturer part number: IRFBE20 RoHS Case style: TO220  

In stock:

34 pcs.

Quantity of pcs.	1+	3+	10+	50+	200+
Net price (EUR)	0,9131	0,6702	0,5371	0,4600	0,4343

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Packaging:
50 Quantity (multiple: 1)

- +

Manufacturer:: Vishay Manufacturer part number: IRFBE20PBF Case style: TO220  

External warehouse:

425 pcs.

Quantity of pcs.	25+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,5712

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Packaging:
25

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	6,5Ohm
Max. drain current:	1,8A
Max. power loss:	54W
Case:	TO220
Manufacturer:	VISHAY
Max. drain-source voltage:	800V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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