IRFBE30
Symbol Micros:
TIRFBE30
Case : TO220
N-MOSFET 4.1A 800V 50W 3Ω
Parameters
Open channel resistance: | 3Ohm |
Max. drain current: | 4,1A |
Max. power loss: | 125W |
Case: | TO220 |
Manufacturer: | VISHAY |
Max. drain-source voltage: | 800V |
Transistor type: | N-MOSFET |
Manufacturer:: Siliconix
Manufacturer part number: IRFBE30 RoHS
Case style: TO220
In stock:
58 pcs.
Quantity of pcs. | 1+ | 5+ | 50+ | 100+ | 400+ |
---|---|---|---|---|---|
Net price (EUR) | 1,6230 | 1,1372 | 0,9107 | 0,8827 | 0,8547 |
Manufacturer:: Vishay
Manufacturer part number: IRFBE30PBF
Case style: TO220
External warehouse:
550 pcs.
Quantity of pcs. | 200+ (Need a significantly larger quantity? Ask for price). |
---|---|
Net price (EUR) | 0,8547 |
Manufacturer:: Vishay
Manufacturer part number: IRFBE30PBF
Case style: TO220
External warehouse:
910 pcs.
Quantity of pcs. | 200+ (Need a significantly larger quantity? Ask for price). |
---|---|
Net price (EUR) | 0,8547 |
Manufacturer:: -
Manufacturer part number: IRFBE30PBF
Case style: TO220
External warehouse:
600 pcs.
Quantity of pcs. | 1+ (Need a significantly larger quantity? Ask for price). |
---|---|
Net price (EUR) | 0,8547 |
Open channel resistance: | 3Ohm |
Max. drain current: | 4,1A |
Max. power loss: | 125W |
Case: | TO220 |
Manufacturer: | VISHAY |
Max. drain-source voltage: | 800V |
Transistor type: | N-MOSFET |
Max. gate-source Voltage: | 20V |
Operating temperature (range): | -55°C ~ 150°C |
Mounting: | THT |
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