IRFBE30

Symbol Micros: TIRFBE30
Contractor Symbol:
Case : TO220
N-MOSFET 4.1A 800V 50W 3Ω
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Parameters
Open channel resistance: 3Ohm
Max. drain current: 4,1A
Max. power loss: 125W
Case: TO220
Manufacturer: VISHAY
Max. drain-source voltage: 800V
Transistor type: N-MOSFET
Manufacturer:: Siliconix Manufacturer part number: IRFBE30 RoHS Case style: TO220  
In stock:
58 pcs.
Quantity of pcs. 1+ 5+ 50+ 100+ 400+
Net price (EUR) 1,6325 1,1439 0,9161 0,8879 0,8597
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Packaging:
50/100
Manufacturer:: Vishay Manufacturer part number: IRFBE30PBF Case style: TO220  
External warehouse:
550 pcs.
Quantity of pcs. 50+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,8597
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Packaging:
50
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: Vishay Manufacturer part number: IRFBE30PBF Case style: TO220  
External warehouse:
900 pcs.
Quantity of pcs. 50+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,8597
Add to comparison tool
Packaging:
50
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: Vishay Manufacturer part number: IRFBE30PBF Case style: TO220  
External warehouse:
175 pcs.
Quantity of pcs. 25+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,8597
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Packaging:
25
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 3Ohm
Max. drain current: 4,1A
Max. power loss: 125W
Case: TO220
Manufacturer: VISHAY
Max. drain-source voltage: 800V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: THT